Effect of GaAs multi-atomic steps thickness on the structural and optical properties of self-assembled In0.5Ga0.5As quantum dots

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown on various thickness of GaAs multi-atomic steps layer using Stranski-Kratanov (SK) growth mode. Atomic force microscopy (AFM) analysis indicates fluctuation of size and density of the dots. The varieties of dots formed on the surface are beli...

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Bibliographic Details
Main Authors: Aryanto, D., Ismail, A .K., Othaman, Z.
Format: Conference or Workshop Item
Published: American Institute of Physics Inc. 2016
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Online Access:http://eprints.utm.my/id/eprint/73424/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984588987&doi=10.1063%2f1.4941628&partnerID=40&md5=b8b0c309d9fd76b42dac6ad166ea8758
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