Effect of GaAs multi-atomic steps thickness on the structural and optical properties of self-assembled In0.5Ga0.5As quantum dots
Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown on various thickness of GaAs multi-atomic steps layer using Stranski-Kratanov (SK) growth mode. Atomic force microscopy (AFM) analysis indicates fluctuation of size and density of the dots. The varieties of dots formed on the surface are beli...
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Main Authors: | , , |
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Format: | Conference or Workshop Item |
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American Institute of Physics Inc.
2016
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Online Access: | http://eprints.utm.my/id/eprint/73424/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984588987&doi=10.1063%2f1.4941628&partnerID=40&md5=b8b0c309d9fd76b42dac6ad166ea8758 |
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