Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire
The annealing of an AlN buffer layer in a carbon-saturated N2–CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650–1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/68841/1/HidetoMiyake2016_AnnealingofanAINBufferLayer.pdf http://eprints.utm.my/id/eprint/68841/ http://iopscience.iop.org/article/10.7567/APEX.9.025501 |
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| Summary: | The annealing of an AlN buffer layer in a carbon-saturated N2–CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650–1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 °C for 1 h. We fabricated a 2-µm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)- and ($10\bar{1}2$)-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 × 108 cm−2. |
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