Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties
Undoped diamond - like carbon thin films have been grown by DC - PECVD system. The synthesis of the DLC films was carried out in the presence of gas of (CH4 + H2 + Ar) in a custom - made reactor. The substrate temperature was initiated from the range of 300 °C to 600 °C under an optimum pressurized...
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my.utm.631582017-06-15T02:09:15Z http://eprints.utm.my/id/eprint/63158/ Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties Keng Yik, Jackie Chen Deraman, Karim Ong, Wai Kit Wan Shamsuri, Wan Nurulhuda Hussin, Rosli Q Science Undoped diamond - like carbon thin films have been grown by DC - PECVD system. The synthesis of the DLC films was carried out in the presence of gas of (CH4 + H2 + Ar) in a custom - made reactor. The substrate temperature was initiated from the range of 300 °C to 600 °C under an optimum pressurized medium. The AFM image reveals that the optimization of DLC films growth at the substrate temperature 400 °C has a significant surface roughness and average grain size which is compatible to the result of film thickness measurement. The sample J400 shows an excellent nonlinear rectifying diode-like characteristic across the small potential difference. Trans Tech Publications 2014 Article PeerReviewed Keng Yik, Jackie Chen and Deraman, Karim and Ong, Wai Kit and Wan Shamsuri, Wan Nurulhuda and Hussin, Rosli (2014) Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties. Advanced Materials Research, 970 . pp. 136-139. ISSN 1022-6680 http://dx.doi.org/10.4028/www.scientific.net/AMR.970.136 DOI :10.4028/www.scientific.net/AMR.970.136 |
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Undoped diamond - like carbon thin films have been grown by DC - PECVD system. The synthesis of the DLC films was carried out in the presence of gas of (CH4 + H2 + Ar) in a custom - made reactor. The substrate temperature was initiated from the range of 300 °C to 600 °C under an optimum pressurized medium. The AFM image reveals that the optimization of DLC films growth at the substrate temperature 400 °C has a significant surface roughness and average grain size which is compatible to the result of film thickness measurement. The sample J400 shows an excellent nonlinear rectifying diode-like characteristic across the small potential difference. |
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Article |
author |
Keng Yik, Jackie Chen Deraman, Karim Ong, Wai Kit Wan Shamsuri, Wan Nurulhuda Hussin, Rosli |
author_facet |
Keng Yik, Jackie Chen Deraman, Karim Ong, Wai Kit Wan Shamsuri, Wan Nurulhuda Hussin, Rosli |
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Keng Yik, Jackie Chen |
title |
Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties |
title_short |
Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties |
title_full |
Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties |
title_fullStr |
Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties |
title_full_unstemmed |
Undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties |
title_sort |
undoped diamond-like carbon thin films grown by direct current-plasma enhanced chemical vapour deposition: structural and electrical properties |
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Trans Tech Publications |
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2014 |
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http://eprints.utm.my/id/eprint/63158/ http://dx.doi.org/10.4028/www.scientific.net/AMR.970.136 |
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