Performance of large signal model heterojunction bipolar transistor INP/INGAAS an optoelectronic mixer

• Main Authors: Shaharuddin, N. A., Idrus, S. M., Isaak, S.
• Format: Conference or Workshop Item
• Published: 2013
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/51241/; http://dx.doi.org/10.1109/ICIEA.2013.6566635

A large-signal model of InP/InGaAs single HBThas been develop considering spectral performance and mixing. This model is based on Gummel Poon BJT model Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310nm for an up-conversion frequency of 30GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.