Performance of large signal model heterojunction bipolar transistor INP/INGAAS an optoelectronic mixer
A large-signal model of InP/InGaAs single HBThas been develop considering spectral performance and mixing. This model is based on Gummel Poon BJT model Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed w...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/51241/ http://dx.doi.org/10.1109/ICIEA.2013.6566635 |
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| Summary: | A large-signal model of InP/InGaAs single HBThas been develop considering spectral performance and mixing. This model is based on Gummel Poon BJT model Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310nm for an up-conversion frequency of 30GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion. |
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