CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication

Integration of Complimentary Metal-Oxide-Semiconductor (CMOS) and Microelectromechanical System (MEMS) technology in Fabry Perot blood pressure sensor (FPPS) fabrication processes is presented. The sensor that comprises of a 125 µm diameter of circular diaphragm is modeled to be fabricated using int...

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Main Authors: Ngajikin, Nor Hafizah, Low, Yee Ling, Ismail, Nur Izzati, Mohd. Supaát, Abu Sahmah, Ibrahim, Mohd. Haniff, Mohd. Kassim, Norazan
Format: Article
Language:English
Published: Penerbit UTM 2013
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Online Access:http://eprints.utm.my/id/eprint/50078/1/NorHafizahNgajikin2013_Cmos-memsintegrationinmicrofabry.pdf
http://eprints.utm.my/id/eprint/50078/
http://dx.doi.org/10.11113/jt.v64.2083
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spelling my.utm.500782018-09-27T04:12:05Z http://eprints.utm.my/id/eprint/50078/ CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication Ngajikin, Nor Hafizah Low, Yee Ling Ismail, Nur Izzati Mohd. Supaát, Abu Sahmah Ibrahim, Mohd. Haniff Mohd. Kassim, Norazan TA Engineering (General). Civil engineering (General) Integration of Complimentary Metal-Oxide-Semiconductor (CMOS) and Microelectromechanical System (MEMS) technology in Fabry Perot blood pressure sensor (FPPS) fabrication processes is presented. The sensor that comprises of a 125 µm diameter of circular diaphragm is modeled to be fabricated using integration of CMOS-MEMS technology. To improve the sensor reliability, a sleeve structure is designed at the back of Silicon wafer by using MEMS Deep Reactive ion Etching (DRIE) process for fiber insertion, which offers a large bonding area. Optical light source at 550 nm wavelength is chosen for this device. The sensor diaphragm mechanic deflection and its optical spectrum is theoretically analyzed and simulated. The analytical results show high linear response in the range of 0 to 40 kPa and a reasonable sensitivity of 1.83 nm/kPa (spectrum shift/pressure) has been obtained for this sensor. The proposed integration of CMOS-MEMS technology limit the material selection yet produces an economical method of FPPS fabrication and integrated system Penerbit UTM 2013 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/50078/1/NorHafizahNgajikin2013_Cmos-memsintegrationinmicrofabry.pdf Ngajikin, Nor Hafizah and Low, Yee Ling and Ismail, Nur Izzati and Mohd. Supaát, Abu Sahmah and Ibrahim, Mohd. Haniff and Mohd. Kassim, Norazan (2013) CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication. Jurnal Teknologi (Sciences and Engineering), 64 (3). pp. 83-87. ISSN 0127-9696 http://dx.doi.org/10.11113/jt.v64.2083 DOI: 10.11113/jt.v64.2083
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Ngajikin, Nor Hafizah
Low, Yee Ling
Ismail, Nur Izzati
Mohd. Supaát, Abu Sahmah
Ibrahim, Mohd. Haniff
Mohd. Kassim, Norazan
CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication
description Integration of Complimentary Metal-Oxide-Semiconductor (CMOS) and Microelectromechanical System (MEMS) technology in Fabry Perot blood pressure sensor (FPPS) fabrication processes is presented. The sensor that comprises of a 125 µm diameter of circular diaphragm is modeled to be fabricated using integration of CMOS-MEMS technology. To improve the sensor reliability, a sleeve structure is designed at the back of Silicon wafer by using MEMS Deep Reactive ion Etching (DRIE) process for fiber insertion, which offers a large bonding area. Optical light source at 550 nm wavelength is chosen for this device. The sensor diaphragm mechanic deflection and its optical spectrum is theoretically analyzed and simulated. The analytical results show high linear response in the range of 0 to 40 kPa and a reasonable sensitivity of 1.83 nm/kPa (spectrum shift/pressure) has been obtained for this sensor. The proposed integration of CMOS-MEMS technology limit the material selection yet produces an economical method of FPPS fabrication and integrated system
format Article
author Ngajikin, Nor Hafizah
Low, Yee Ling
Ismail, Nur Izzati
Mohd. Supaát, Abu Sahmah
Ibrahim, Mohd. Haniff
Mohd. Kassim, Norazan
author_facet Ngajikin, Nor Hafizah
Low, Yee Ling
Ismail, Nur Izzati
Mohd. Supaát, Abu Sahmah
Ibrahim, Mohd. Haniff
Mohd. Kassim, Norazan
author_sort Ngajikin, Nor Hafizah
title CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication
title_short CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication
title_full CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication
title_fullStr CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication
title_full_unstemmed CMOS-MEMS integration in micro Fabry Perot pressure sensor fabrication
title_sort cmos-mems integration in micro fabry perot pressure sensor fabrication
publisher Penerbit UTM
publishDate 2013
url http://eprints.utm.my/id/eprint/50078/1/NorHafizahNgajikin2013_Cmos-memsintegrationinmicrofabry.pdf
http://eprints.utm.my/id/eprint/50078/
http://dx.doi.org/10.11113/jt.v64.2083
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score 13.18916