Temperature and bi-concentration dependence of the bandgap and spin-orbit splitting in ingabias/inp semiconductors for mid-infrared applications
Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, Eg, and spin-orbit splitting, ?SO, respectively. The possibility of achieving ?SO?>?Eg and a reduced temperature (T) dependence for Eg are significant for suppressing recombination losses a...
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Main Authors: | I. P., Marko, Batool, Z., Hild, K., Jin, S. R., Hossain, N., Hosea, T. J. C., Petropoulos, J. P., Zhong, Y., Dongmo, P. B., Zide, J. M. O, Sweeney, S. J. |
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Format: | Article |
Published: |
American Institute of Physics
2012
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Online Access: | http://eprints.utm.my/id/eprint/47584/ https://dx.doi.org/10.1063/1.4768532 |
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