Temperature and bi-concentration dependence of the bandgap and spin-orbit splitting in ingabias/inp semiconductors for mid-infrared applications

• Main Authors: I. P., Marko, Batool, Z., Hild, K., Jin, S. R., Hossain, N., Hosea, T. J. C., Petropoulos, J. P., Zhong, Y., Dongmo, P. B., Zide, J. M. O, Sweeney, S. J.
• Format: Article
• Published: American Institute of Physics 2012
• Subjects: QC Physics
• Online Access: http://eprints.utm.my/id/eprint/47584/; https://dx.doi.org/10.1063/1.4768532

Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, Eg, and spin-orbit splitting, ?SO, respectively. The possibility of achieving ?SO?>?Eg and a reduced temperature (T) dependence for Eg are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure Eg(x, T) and ?SO (x, T) in In0.53Ga0.47BixAs1-x/InP samples for 0?=?x?=?0.039 by various complementary optical spectroscopic techniques. While we find no clear evidence of a decreased dEg/dT (˜0.34?±?0.06?meV/K in all samples) we find ?SO?>?Eg for x?>?3.3–4.3%. The predictions of a valence band anti-crossing model agree well with the measurements.