Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ∆(so) > E-g

• Main Authors: Chai, Grace M. T., Broderick, Christopher A., O'Reilly, Eoin P. O., Othaman, Zulkafli, Jin, Shirong, Petropoulos, J. P., Zhong, Yujun, Dongmo, Pernell B., Zide, Joshua M. O., Sweeney, Stephen J., Hosea, Thomas Jeff Cockburn
• Format: Article
• Published: Institute of Physics Publishing (IOP) 2015
• Subjects: QC Physics
• Online Access: http://eprints.utm.my/id/eprint/55151/; http://dx.doi.org/10.1088/0268-1242/30/9/094015

Temperature dependent photo-modulated reflectance is used to measure the band gap Eg and spin-orbit splitting energy ∆so in dilute-Bi In0.53Ga0.47As1-xBix/InP for 1.2% = x = 5.8%. At room temperature, Eg decreases with increasing Bi from 0.65 to 0.47 eV (~2.6 µm), while ∆so increases from 0.42 to 0....