Study of electrostatic potential surface around bipyramidal gaas quantum dot

• Main Authors: Ithnin, H., Mat Isa, Ahmad Radzi, Kasmin, Mohd. Khalid, Saeed, M. A.
• 格式: Article
• 出版: 2012
• 主题: TA Engineering (General). Civil engineering (General)
• 在线阅读: http://eprints.utm.my/id/eprint/47552/; http://chalcogen.ro/1787_Ithnin.pdf

Semiconductor quantum dot have got scientific interest because of their unique electronic nature. In this article, an isolated square bipyramidal gallium arsenide (GaAs) quantum dot has been optimized using DFT method. The size of quantum dot was 1.2 nm2 (square base) and 1.7nm height and consisted...