Study of electrostatic potential surface around bipyramidal gaas quantum dot

• Main Authors: Ithnin, H., Mat Isa, Ahmad Radzi, Kasmin, Mohd. Khalid, Saeed, M. A.
• Format: Article
• Published: 2012
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.utm.my/id/eprint/47552/; http://chalcogen.ro/1787_Ithnin.pdf

Semiconductor quantum dot have got scientific interest because of their unique electronic nature. In this article, an isolated square bipyramidal gallium arsenide (GaAs) quantum dot has been optimized using DFT method. The size of quantum dot was 1.2 nm2 (square base) and 1.7nm height and consisted of total 84 atoms. The quantum dot was optimized using hybrid B3LYP functional and SBKJC pseudo potential basis sets. The electrostatic potential surface around the optimized GaAs quantum dot was plotted and the result showed the potential on the pyramid surface was polarized with two positive and negative surfaces. This potential was due electronic and nuclear charge of different arrangement on the surface structure of the dot.