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Modelling and simulation of saturation region in double gate graphene nanoribbon transistors

Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. Using the proposed models, the effects of several parameters...

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Main Authors: Ghadiry, Mahdiar H., Nadi, Mahdieh S., Rahmani, Meisam, Abd. Manaf, Asrulnizam
Format: Article
Published: Pleiades Publishing, Ltd. 2012
Subjects:
QD Chemistry
Online Access:http://eprints.utm.my/id/eprint/47235/
http://dx.doi.org/10.1134/S1063782612010101
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spelling my.utm.472352019-03-05T01:51:14Z http://eprints.utm.my/id/eprint/47235/ Modelling and simulation of saturation region in double gate graphene nanoribbon transistors Ghadiry, Mahdiar H. Nadi, Mahdieh S. Rahmani, Meisam Abd. Manaf, Asrulnizam QD Chemistry Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. Using the proposed models, the effects of several parameters such as drain-source voltage, oxide thickness and channel length on the length of saturation region and electric field near the drain are studied. Pleiades Publishing, Ltd. 2012 Article PeerReviewed Ghadiry, Mahdiar H. and Nadi, Mahdieh S. and Rahmani, Meisam and Abd. Manaf, Asrulnizam (2012) Modelling and simulation of saturation region in double gate graphene nanoribbon transistors. Semiconductors, 46 (1). pp. 126-129. ISSN 1063-7826 http://dx.doi.org/10.1134/S1063782612010101 DOI:10.1134/S1063782612010101
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QD Chemistry
spellingShingle QD Chemistry
Ghadiry, Mahdiar H.
Nadi, Mahdieh S.
Rahmani, Meisam
Abd. Manaf, Asrulnizam
Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
description Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. Using the proposed models, the effects of several parameters such as drain-source voltage, oxide thickness and channel length on the length of saturation region and electric field near the drain are studied.
format Article
author Ghadiry, Mahdiar H.
Nadi, Mahdieh S.
Rahmani, Meisam
Abd. Manaf, Asrulnizam
author_facet Ghadiry, Mahdiar H.
Nadi, Mahdieh S.
Rahmani, Meisam
Abd. Manaf, Asrulnizam
author_sort Ghadiry, Mahdiar H.
title Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
title_short Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
title_full Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
title_fullStr Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
title_full_unstemmed Modelling and simulation of saturation region in double gate graphene nanoribbon transistors
title_sort modelling and simulation of saturation region in double gate graphene nanoribbon transistors
publisher Pleiades Publishing, Ltd.
publishDate 2012
url http://eprints.utm.my/id/eprint/47235/
http://dx.doi.org/10.1134/S1063782612010101
_version_ 1643652266479058944
score 13.160551

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