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Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts

The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to...

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Main Authors: Riyadi, Munawar A., Loong, Michael Peng Tan, Hashim, Abdul Manaf, Arora, Vijay K.
Format: Article
Published: American Institute of Physics 2011
Subjects:
QP Physiology
Online Access:http://eprints.utm.my/id/eprint/45046/
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spelling my.utm.450462017-10-01T03:28:59Z http://eprints.utm.my/id/eprint/45046/ Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts Riyadi, Munawar A. Loong, Michael Peng Tan Hashim, Abdul Manaf Arora, Vijay K. QP Physiology The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to or smaller than the scattering-limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long-length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data. American Institute of Physics 2011 Article PeerReviewed Riyadi, Munawar A. and Loong, Michael Peng Tan and Hashim, Abdul Manaf and Arora, Vijay K. (2011) Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts. AIP Conference Proceedings, 1347 . pp. 169-174. ISSN 1523-651X
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QP Physiology
spellingShingle QP Physiology
Riyadi, Munawar A.
Loong, Michael Peng Tan
Hashim, Abdul Manaf
Arora, Vijay K.
Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
description The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to or smaller than the scattering-limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long-length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data.
format Article
author Riyadi, Munawar A.
Loong, Michael Peng Tan
Hashim, Abdul Manaf
Arora, Vijay K.
author_facet Riyadi, Munawar A.
Loong, Michael Peng Tan
Hashim, Abdul Manaf
Arora, Vijay K.
author_sort Riyadi, Munawar A.
title Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
title_short Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
title_full Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
title_fullStr Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
title_full_unstemmed Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
title_sort mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
publisher American Institute of Physics
publishDate 2011
url http://eprints.utm.my/id/eprint/45046/
_version_ 1643651626221699072
score 13.160551

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