Low-dimensional silicon nanowire (SINM) conductance model
To keep downscaling on the track, the introduced of new structure such as Silicon Nanowire (SiNW) is necessary and appear to be the next step to pursue. Based on the new structures, quantum effects will be dominant and analytical analysis need to be done. SiNW with diameter in the range of free elec...
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my.utm.406922017-02-15T06:17:13Z http://eprints.utm.my/id/eprint/40692/ Low-dimensional silicon nanowire (SINM) conductance model Ahmadi, Mohammad Taghi Johari, Zaharah Isaak, Suhaila Ismail, Razali QD Chemistry To keep downscaling on the track, the introduced of new structure such as Silicon Nanowire (SiNW) is necessary and appear to be the next step to pursue. Based on the new structures, quantum effects will be dominant and analytical analysis need to be done. SiNW with diameter in the range of free electron De-Broglie wave length indicates one-dimensional behaviour because of quantum confinement effect. In this research low dimensional analytical model to capture the effects of conductance based on it channel length and temperature effect are explored. Based on the presented model, the SiNW conductance with channel length, L of 10 nm is investigated. When increased the L, neutrality point will be shifted down due to the restricted freedom of carrier scattering and reduced conductance. In contrast, the temperature does not affect conductance value out of neutrality point. Finally, the comparison study between presented model and published data is obtained and adequate agreement is reported. American Scientific Publishers 2013 Article PeerReviewed Ahmadi, Mohammad Taghi and Johari, Zaharah and Isaak, Suhaila and Ismail, Razali (2013) Low-dimensional silicon nanowire (SINM) conductance model. Quantum Matter, 2 (5). pp. 1-4. ISSN 2164-7615 |
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QD Chemistry Ahmadi, Mohammad Taghi Johari, Zaharah Isaak, Suhaila Ismail, Razali Low-dimensional silicon nanowire (SINM) conductance model |
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To keep downscaling on the track, the introduced of new structure such as Silicon Nanowire (SiNW) is necessary and appear to be the next step to pursue. Based on the new structures, quantum effects will be dominant and analytical analysis need to be done. SiNW with diameter in the range of free electron De-Broglie wave length indicates one-dimensional behaviour because of quantum confinement effect. In this research low dimensional analytical model to capture the effects of conductance based on it channel length and temperature effect are explored. Based on the presented model, the SiNW conductance with channel length, L of 10 nm is investigated. When increased the L, neutrality point will be shifted down due to the restricted freedom of carrier scattering and reduced conductance. In contrast, the temperature does not affect conductance value out of neutrality point. Finally, the comparison study between presented model and published data is obtained and adequate agreement is reported. |
format |
Article |
author |
Ahmadi, Mohammad Taghi Johari, Zaharah Isaak, Suhaila Ismail, Razali |
author_facet |
Ahmadi, Mohammad Taghi Johari, Zaharah Isaak, Suhaila Ismail, Razali |
author_sort |
Ahmadi, Mohammad Taghi |
title |
Low-dimensional silicon nanowire (SINM) conductance model |
title_short |
Low-dimensional silicon nanowire (SINM) conductance model |
title_full |
Low-dimensional silicon nanowire (SINM) conductance model |
title_fullStr |
Low-dimensional silicon nanowire (SINM) conductance model |
title_full_unstemmed |
Low-dimensional silicon nanowire (SINM) conductance model |
title_sort |
low-dimensional silicon nanowire (sinm) conductance model |
publisher |
American Scientific Publishers |
publishDate |
2013 |
url |
http://eprints.utm.my/id/eprint/40692/ |
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1643650529348288512 |
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13.160551 |