Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer
The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-convers...
Saved in:
Main Authors: | , , , |
---|---|
Format: | Conference or Workshop Item |
Published: |
2012
|
Online Access: | http://eprints.utm.my/id/eprint/34022/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.utm.34022 |
---|---|
record_format |
eprints |
spelling |
my.utm.340222017-09-10T07:31:04Z http://eprints.utm.my/id/eprint/34022/ Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer Shaharuddin, Nur Amirah Idrus, Sevia Mahdaliza Isahak, Suhaila Zulkifli, Nadiatulhuda The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application. 2012 Conference or Workshop Item PeerReviewed Shaharuddin, Nur Amirah and Idrus, Sevia Mahdaliza and Isahak, Suhaila and Zulkifli, Nadiatulhuda (2012) Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer. In: The 18th Asia-Pacific Conference on Communications (APCC 2012). |
institution |
Universiti Teknologi Malaysia |
building |
UTM Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Teknologi Malaysia |
content_source |
UTM Institutional Repository |
url_provider |
http://eprints.utm.my/ |
description |
The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application. |
format |
Conference or Workshop Item |
author |
Shaharuddin, Nur Amirah Idrus, Sevia Mahdaliza Isahak, Suhaila Zulkifli, Nadiatulhuda |
spellingShingle |
Shaharuddin, Nur Amirah Idrus, Sevia Mahdaliza Isahak, Suhaila Zulkifli, Nadiatulhuda Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer |
author_facet |
Shaharuddin, Nur Amirah Idrus, Sevia Mahdaliza Isahak, Suhaila Zulkifli, Nadiatulhuda |
author_sort |
Shaharuddin, Nur Amirah |
title |
Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer |
title_short |
Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer |
title_full |
Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer |
title_fullStr |
Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer |
title_full_unstemmed |
Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer |
title_sort |
characterisation of inp/ingaas heterojunction bipolar transistor as an optoeletronic mixer |
publishDate |
2012 |
url |
http://eprints.utm.my/id/eprint/34022/ |
_version_ |
1643649495044456448 |
score |
13.211869 |