Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer
The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-convers...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
2012
|
| Online Access: | http://eprints.utm.my/id/eprint/34022/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application. |
|---|