Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
Needle-like silicon nanowires have been grown using gold colloid as the catalyst and silane (SiH4) as the precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Si nanowires produced by this method were unique with sharpness below 3 nm. High resolution transmission e...
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my.utm.299042020-10-22T04:07:01Z http://eprints.utm.my/id/eprint/29904/ Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism Wahab, Yussof Othaman, Zulkafli Hamidinezhad, Habib TP Chemical technology Needle-like silicon nanowires have been grown using gold colloid as the catalyst and silane (SiH4) as the precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Si nanowires produced by this method were unique with sharpness below 3 nm. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction technique (XRD) confirmed the single crystalline growth of the Si nanowires with (111) crystalline structure. Raman spectroscopy also has revealed the presence of crystalline Si in the grown Si nanowire body. In this research, presence of a gold nanoparticle on tip of the nanowires proved vapor–liquid–solid growth mechanism. Springer 2011-08 Article PeerReviewed Wahab, Yussof and Othaman, Zulkafli and Hamidinezhad, Habib (2011) Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism. Journal of Materials Science, 46 (15). pp. 5085-5089. ISSN 0022-2461 http://dx.doi.org/10.1007/s10853-011-5435-6 DOI:10.1007/s10853-011-5435-6 |
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TP Chemical technology Wahab, Yussof Othaman, Zulkafli Hamidinezhad, Habib Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
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Needle-like silicon nanowires have been grown using gold colloid as the catalyst and silane (SiH4) as the precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Si nanowires produced by this method were unique with sharpness below 3 nm. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction technique (XRD) confirmed the single crystalline growth of the Si nanowires with (111) crystalline structure. Raman spectroscopy also has revealed the presence of crystalline Si in the grown Si nanowire body. In this research, presence of a gold nanoparticle on tip of the nanowires proved vapor–liquid–solid growth mechanism. |
format |
Article |
author |
Wahab, Yussof Othaman, Zulkafli Hamidinezhad, Habib |
author_facet |
Wahab, Yussof Othaman, Zulkafli Hamidinezhad, Habib |
author_sort |
Wahab, Yussof |
title |
Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
title_short |
Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
title_full |
Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
title_fullStr |
Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
title_full_unstemmed |
Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
title_sort |
ultra-sharp pointed tip si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via vls mechanism |
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Springer |
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2011 |
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http://eprints.utm.my/id/eprint/29904/ http://dx.doi.org/10.1007/s10853-011-5435-6 |
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