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Formation and characterization of silicon self-assembled nanodots

Silicon self-assembled quantum dots have been successfully prepared on corning glass (7059) substrate. The samples were fabricated using the common technique RF magnetron sputtering system depend on plasma excitation at varying growth parameters and high temperature of more than 500°C. The measureme...

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Main Authors: Idrees, F. A., Sakrani, Samsudi, Othaman, Zulkafli
Format: Book Section
Published: American Institute of Physics 2011
Subjects:
Q Science
Online Access:http://eprints.utm.my/id/eprint/29714/
http://dx.doi.org/10.1063/1.3587011
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spelling my.utm.297142017-02-04T07:40:30Z http://eprints.utm.my/id/eprint/29714/ Formation and characterization of silicon self-assembled nanodots Idrees, F. A. Sakrani, Samsudi Othaman, Zulkafli Q Science Silicon self-assembled quantum dots have been successfully prepared on corning glass (7059) substrate. The samples were fabricated using the common technique RF magnetron sputtering system depend on plasma excitation at varying growth parameters and high temperature of more than 500°C. The measurements of average dots size estimated to be 36 nm is confirmed by using AFM. The PL peak located at 570 nm, informed band gap energy=2.10eV larger than bulk material band gap, that confirmed the miniaturized of the dots. To measure the Silicon atomic% deposit on corning glass (7059) substrate EDX has been used. American Institute of Physics 2011 Book Section PeerReviewed Idrees, F. A. and Sakrani, Samsudi and Othaman, Zulkafli (2011) Formation and characterization of silicon self-assembled nanodots. In: Enabling Science And Nanotechnology. American Institute of Physics, USA, pp. 324-327. ISBN 978-073540897-5 http://dx.doi.org/10.1063/1.3587011 10.1063/1.3587011
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic Q Science
spellingShingle Q Science
Idrees, F. A.
Sakrani, Samsudi
Othaman, Zulkafli
Formation and characterization of silicon self-assembled nanodots
description Silicon self-assembled quantum dots have been successfully prepared on corning glass (7059) substrate. The samples were fabricated using the common technique RF magnetron sputtering system depend on plasma excitation at varying growth parameters and high temperature of more than 500°C. The measurements of average dots size estimated to be 36 nm is confirmed by using AFM. The PL peak located at 570 nm, informed band gap energy=2.10eV larger than bulk material band gap, that confirmed the miniaturized of the dots. To measure the Silicon atomic% deposit on corning glass (7059) substrate EDX has been used.
format Book Section
author Idrees, F. A.
Sakrani, Samsudi
Othaman, Zulkafli
author_facet Idrees, F. A.
Sakrani, Samsudi
Othaman, Zulkafli
author_sort Idrees, F. A.
title Formation and characterization of silicon self-assembled nanodots
title_short Formation and characterization of silicon self-assembled nanodots
title_full Formation and characterization of silicon self-assembled nanodots
title_fullStr Formation and characterization of silicon self-assembled nanodots
title_full_unstemmed Formation and characterization of silicon self-assembled nanodots
title_sort formation and characterization of silicon self-assembled nanodots
publisher American Institute of Physics
publishDate 2011
url http://eprints.utm.my/id/eprint/29714/
http://dx.doi.org/10.1063/1.3587011
_version_ 1643648359714521088
score 13.214268

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