Formation and characterization of silicon self-assembled nanodots
Silicon self-assembled quantum dots have been successfully prepared on corning glass (7059) substrate. The samples were fabricated using the common technique RF magnetron sputtering system depend on plasma excitation at varying growth parameters and high temperature of more than 500°C. The measureme...
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| Main Authors: | , , |
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| Format: | Book Section |
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American Institute of Physics
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29714/ http://dx.doi.org/10.1063/1.3587011 |
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| Summary: | Silicon self-assembled quantum dots have been successfully prepared on corning glass (7059) substrate. The samples were fabricated using the common technique RF magnetron sputtering system depend on plasma excitation at varying growth parameters and high temperature of more than 500°C. The measurements of average dots size estimated to be 36 nm is confirmed by using AFM. The PL peak located at 570 nm, informed band gap energy=2.10eV larger than bulk material band gap, that confirmed the miniaturized of the dots. To measure the Silicon atomic% deposit on corning glass (7059) substrate EDX has been used. |
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