The effect of In0.1Ga0.9As underlying layer on the structural properties of self-assembled In0.5Ga0.5As quantum dots
The effect of a thin In0.1Ga0.9As underlying layer on the structural properties of single layer In0.5Ga0.5As quantum dots (QDs) was investigated using atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HR-XRD) characterization. The size of do...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
World Scientific Publishing Co. Pte. Ltd.
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29488/ http://dx.doi.org/10.1142/S1793292011002482 |
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