Current–voltage characteristics of a silicon nanowire transistor
The nanowires and nanotubes are being considered as the best candidates for high-speed applications. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high-electric-field streaming are based on the asymmetrical distribution fun...
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Main Authors: | , , , |
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Format: | Article |
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Elsevier
2009
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Online Access: | http://eprints.utm.my/id/eprint/13297/ http://dx.doi.org/10.1016/j.mejo.2008.06.060 |
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