Current–voltage characteristics of a silicon nanowire transistor
The nanowires and nanotubes are being considered as the best candidates for high-speed applications. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high-electric-field streaming are based on the asymmetrical distribution fun...
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| Main Authors: | , , , |
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| Format: | Article |
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Elsevier
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/13297/ http://dx.doi.org/10.1016/j.mejo.2008.06.060 |
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| Summary: | The nanowires and nanotubes are being considered as the best candidates for high-speed applications. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high-electric-field streaming are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The limited drift velocity is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the limited drift velocity is the Fermi velocity for a degenerately doped silicon nanowire, increasing with carrier concentration but independent of temperature. The results obtained are applied to the modeling of the current-voltage characteristics of a nanowire transistor.
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