Analytical study of carrier statistic in 2-dimensional nanoscale P-MOS

• Main Authors: Ismail, Razali, Riyadi, Munawar Agus, Ahmadi, M. Taghi, Saad, Ismail R.
• Format: Book Section
• Published: American Institute of Physics 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13077/; http://dx.doi.org/10.1063/1.3160276

The carrier statistics for 2-dimensional (2-D) p-type nanostructure was elaborated, especially for p-MOSFET. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concentration in 2-D was obtained using the calculated density of state, based on the Fermi - Dirac statistic on the order of zero ( I0 ). In the nondegenerate regime the carrier statistic results replicate the form the Boltzmann statistics. However, the results vary in degenerate regime, which result in the presence of ?v. The results for 2-D carrier statistic were numerically computed, and the comparison of the carrier statistic for degenerate and non-degenerate regime is presented, along with its respective Fermi-Dirac integral. It is also found that the density of state of hole in 2-D p-MOSFET is independent of the temperature.