Analytical study of carrier statistic in 2-dimensional nanoscale P-MOS
The carrier statistics for 2-dimensional (2-D) p-type nanostructure was elaborated, especially for p-MOSFET. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The...
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| Main Authors: | , , , |
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| Format: | Book Section |
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American Institute of Physics
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/13077/ http://dx.doi.org/10.1063/1.3160276 |
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| Summary: | The carrier statistics for 2-dimensional (2-D) p-type nanostructure was elaborated, especially for p-MOSFET. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concentration in 2-D was obtained using the calculated density of state, based on the Fermi - Dirac statistic on the order of zero ( I0 ). In the nondegenerate regime the carrier statistic results replicate the form the Boltzmann statistics. However, the results vary in degenerate regime, which result in the presence of ?v. The results for 2-D carrier statistic were numerically computed, and the comparison of the carrier statistic for degenerate and non-degenerate regime is presented, along with its respective Fermi-Dirac integral. It is also found that the density of state of hole in 2-D p-MOSFET is independent of the temperature.
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