Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system

This research introduces an alternative approach on materials characterization by developing an in-house X-ray Absorption Spectroscopy (XAS) system utilizing powder X-ray Diffraction (XRD) machine. The performance of the in-house XAS system was investigated by analysing the position of Cu K-edge and...

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Main Authors: Saniman, Siti Sarah, Omar, Muhammad Firdaus
Format: Article
Language:English
Published: Penerbit UTM Press 2023
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Online Access:http://eprints.utm.my/105357/1/MuhammadFirdausOmar2023_ProbingtheElectronicPropertiesofCuandCuO.pdf
http://eprints.utm.my/105357/
http://dx.doi.org/10.11113/mjfas.v19n6.3143
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spelling my.utm.1053572024-04-24T06:36:14Z http://eprints.utm.my/105357/ Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system Saniman, Siti Sarah Omar, Muhammad Firdaus QC Physics This research introduces an alternative approach on materials characterization by developing an in-house X-ray Absorption Spectroscopy (XAS) system utilizing powder X-ray Diffraction (XRD) machine. The performance of the in-house XAS system was investigated by analysing the position of Cu K-edge and the absorption spectrum shape within the X-ray Absorption Near Edge Structure (XANES) region. Copper (Cu) based samples were used to test the performance of the system where Cu and Copper Oxide (CuO) thin film deposited on polyimide tape and silicon wafer (100) prepared through the deposition process carried out using RF Magnetron Sputtering machine. Phase confirmation analysis were conducted by XRD and the deposited films’ thickness were measured by Scanning Electron Microscope (SEM). The laboratory-based XAS measurement was carried out using Rigaku SmartLab X-ray Diffractometer configured for Bragg-Brentano (BB) measurement mode. Molybdenum (Mo) target was used to produce white X-rays by energizing it near 20 keV ±0.01 keV. XRD measurements on XRD and SEM analysis proves successful deposition of pure Cu and CuO thin films and the film thickness measured is 1.432 μm and 0.680 μm respectively. The conclusive findings of the laboratory-based XAS measurements indicate successful acquisition of XAS data with similar spectrum shape of experimental Cu and CuO XANES in comparison with theoretical data. Next, experimental XANES shows clear observation of Cu K-edge peaks for Cu thin film at 8.9737 keV, while Cu K-edge for CuO thin films is not observable. Lastly, there is also presence of significant XANES broadening and which then effect consequent peak shiftings. Penerbit UTM Press 2023-11 Article PeerReviewed application/pdf en http://eprints.utm.my/105357/1/MuhammadFirdausOmar2023_ProbingtheElectronicPropertiesofCuandCuO.pdf Saniman, Siti Sarah and Omar, Muhammad Firdaus (2023) Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system. Malaysian Journal of Fundamental and Applied Sciences, 19 (6). pp. 970-979. ISSN 2289-599X http://dx.doi.org/10.11113/mjfas.v19n6.3143 DOI:10.11113/mjfas.v19n6.3143
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic QC Physics
spellingShingle QC Physics
Saniman, Siti Sarah
Omar, Muhammad Firdaus
Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system
description This research introduces an alternative approach on materials characterization by developing an in-house X-ray Absorption Spectroscopy (XAS) system utilizing powder X-ray Diffraction (XRD) machine. The performance of the in-house XAS system was investigated by analysing the position of Cu K-edge and the absorption spectrum shape within the X-ray Absorption Near Edge Structure (XANES) region. Copper (Cu) based samples were used to test the performance of the system where Cu and Copper Oxide (CuO) thin film deposited on polyimide tape and silicon wafer (100) prepared through the deposition process carried out using RF Magnetron Sputtering machine. Phase confirmation analysis were conducted by XRD and the deposited films’ thickness were measured by Scanning Electron Microscope (SEM). The laboratory-based XAS measurement was carried out using Rigaku SmartLab X-ray Diffractometer configured for Bragg-Brentano (BB) measurement mode. Molybdenum (Mo) target was used to produce white X-rays by energizing it near 20 keV ±0.01 keV. XRD measurements on XRD and SEM analysis proves successful deposition of pure Cu and CuO thin films and the film thickness measured is 1.432 μm and 0.680 μm respectively. The conclusive findings of the laboratory-based XAS measurements indicate successful acquisition of XAS data with similar spectrum shape of experimental Cu and CuO XANES in comparison with theoretical data. Next, experimental XANES shows clear observation of Cu K-edge peaks for Cu thin film at 8.9737 keV, while Cu K-edge for CuO thin films is not observable. Lastly, there is also presence of significant XANES broadening and which then effect consequent peak shiftings.
format Article
author Saniman, Siti Sarah
Omar, Muhammad Firdaus
author_facet Saniman, Siti Sarah
Omar, Muhammad Firdaus
author_sort Saniman, Siti Sarah
title Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system
title_short Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system
title_full Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system
title_fullStr Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system
title_full_unstemmed Probing the electronic properties of Cu and CuO thin films via XANES utilizing powder XRD system
title_sort probing the electronic properties of cu and cuo thin films via xanes utilizing powder xrd system
publisher Penerbit UTM Press
publishDate 2023
url http://eprints.utm.my/105357/1/MuhammadFirdausOmar2023_ProbingtheElectronicPropertiesofCuandCuO.pdf
http://eprints.utm.my/105357/
http://dx.doi.org/10.11113/mjfas.v19n6.3143
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score 13.209306