Modelling and simulation of 2d aluminium-doped silicene transport properties in field-effect transistors

• Main Author: Chuan, Mu Wen
• Format: Thesis
• Language: English
• Published: 2021
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/102406/1/ChuanMuWenPSKE2021.pdf.pdf; http://eprints.utm.my/id/eprint/102406/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149256

One of the more-than-Moore approaches is to use two-dimensional (2D) silicene as the channel in a transistor. Silicene shares outstanding electronic properties with graphene, yet provides an added advantage in terms of its compatibility with silicon (Si) wafer technology. However, pristine silicene...