Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconducto...
Saved in:
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Book Section |
| Language: | English |
| Published: |
Penerbit UTHM
2020
|
| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/2746/1/Ch05.pdf http://eprints.uthm.edu.my/2746/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconductor compounds with gallium (Ga) have developed as the leading materials for manufacturing energy-efficient LED [1]. The reason of GaN becoming the trend is due to the excellent optical properties and it is able to emit a wide range of wavelengths in the visible spectrum at the efficiency which greater than traditional lighting technologies [2]. The group III – nitride semiconductor compounds are typically grown with wurtzite crystal structure which consists of a large band gap around 1.0 eV to 6.0 eV. |
|---|