Characterisation Of Sheet Resistivity And Contact Resistivity For Source/Drain Of N-Mosfet Device

In this study, the sheet resistivity (ps) of the thin film phosphorus ion source/drain implantation regions, and the specific interfacial contact resistivity (pc) between the thin film aluminium 1% silicon electrode layer and the thin film phosphorus ion source/drain implantation regions of the n-ch...

Full description

Saved in:
Bibliographic Details
Main Author: Rhonira, Latif
Format: Article
Language:English
Published: Penerbit Universiti, UTeM 2014
Subjects:
Online Access:http://eprints.utem.edu.my/id/eprint/16843/2/JTEC2014.pdf
http://eprints.utem.edu.my/id/eprint/16843/
http://journal.utem.edu.my/index.php/jtec/article/view/464
Tags: Add Tag
No Tags, Be the first to tag this record!