Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer

• Main Authors: Yusuf, Yusnizam, Wee, Kie Tang, Taib, Muhamad Ikram Md, Zainal, Norzaini
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/49066/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2060.pdf; http://eprints.usm.my/49066/

This work will describe the influence of molarity and time of potassium hydroxide etching on Al-rich AlGaN layer. With potassium hydroxide (KOH) molarity of 5 mol/L, no significant change on the pores formation was observed for 5 and 10 minutes of etching. Nonetheless, there was a possibilty that some of the Ga atoms were eliminated for 10 minutes of etching, resulting in co-existance of AlGaN material with higher Al content. Similar behaviour was also witnessed in the case for 10 mol/L of KOH with 5 and 10 minutes of etching. Nonetheless, well-defined hexagonal patterns were only formed when the etching was conducted using 10 mol/L of KOH for 10 minutes. Such patterns have the potential to increase light extraction efficiency of UV LEDs.