Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etchin...
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2011
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my.usm.eprints.43362 http://eprints.usm.my/43362/ Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography Lew, Kam Chung TN1-997 Mining engineering. Metallurgy In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the uncover silicon layer and oxide layer, respectively. 2011-10 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf Lew, Kam Chung (2011) Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography. Masters thesis, Universiti Sains Malaysia. |
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TN1-997 Mining engineering. Metallurgy |
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TN1-997 Mining engineering. Metallurgy Lew, Kam Chung Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography |
| description |
In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the
uncover silicon layer and oxide layer, respectively. |
| format |
Thesis |
| author |
Lew, Kam Chung |
| author_facet |
Lew, Kam Chung |
| author_sort |
Lew, Kam Chung |
| title |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
| title_short |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
| title_full |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
| title_fullStr |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
| title_full_unstemmed |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
| title_sort |
effect of tetramethylammonium hydroxide (tmah) etchant on the formation of silicon nanowires transistor patterned by atomic force microscopy (afm)
lithography |
| publishDate |
2011 |
| url |
http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf http://eprints.usm.my/43362/ |
| _version_ |
1643710723333816320 |
| score |
13.159004 |