Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications.
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Main Authors: | Jeong, Hyun Moon, Kuan, Yew Cheong, Ho, Keun Song, Jeong, Hyuk Yim, Myeong, Suk Oh, Jong, Ho Lee, Bahng, Wook, Nam, Kyun Kim, Hyeong, Joon Kim |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2007
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Subjects: | |
Online Access: | http://eprints.usm.my/13610/1/Effect_of_nitric.pdf http://eprints.usm.my/13610/ |
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