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Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography

The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM)...

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Main Authors: Dehzangi, Arash, Larki, Farhad, Saion, Elias, Hutagalung, Sabar D., Hamidon, Mohd Nizar, Hassan, Jumiah
Format: Conference or Workshop Item
Language:English
Published: IEEE 2011
Online Access:http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf
http://psasir.upm.edu.my/id/eprint/68199/
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spelling my.upm.eprints.681992019-05-09T03:39:08Z http://psasir.upm.edu.my/id/eprint/68199/ Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography Dehzangi, Arash Larki, Farhad Saion, Elias Hutagalung, Sabar D. Hamidon, Mohd Nizar Hassan, Jumiah The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one. IEEE 2011 Conference or Workshop Item PeerReviewed text en http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf Dehzangi, Arash and Larki, Farhad and Saion, Elias and Hutagalung, Sabar D. and Hamidon, Mohd Nizar and Hassan, Jumiah (2011) Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography. In: 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM 2011), 28-30 Sept. 2011, Le Meridien Hotel, Kota Kinabalu, Sabah. (pp. 104-107). 10.1109/RSM.2011.6088302
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one.
format Conference or Workshop Item
author Dehzangi, Arash
Larki, Farhad
Saion, Elias
Hutagalung, Sabar D.
Hamidon, Mohd Nizar
Hassan, Jumiah
spellingShingle Dehzangi, Arash
Larki, Farhad
Saion, Elias
Hutagalung, Sabar D.
Hamidon, Mohd Nizar
Hassan, Jumiah
Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
author_facet Dehzangi, Arash
Larki, Farhad
Saion, Elias
Hutagalung, Sabar D.
Hamidon, Mohd Nizar
Hassan, Jumiah
author_sort Dehzangi, Arash
title Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
title_short Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
title_full Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
title_fullStr Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
title_full_unstemmed Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
title_sort field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography
publisher IEEE
publishDate 2011
url http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf
http://psasir.upm.edu.my/id/eprint/68199/
_version_ 1643839130482769920
score 13.160551

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