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InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.

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Main Authors: Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H.
Format: Conference Proceeding
Language:en_US
Published: 2017
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spelling my.uniten.dspace-59872018-02-07T08:24:19Z InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product Ker, P.J. Marshall, A.R.J. Krysa, A.B. David, J.P.R. Tan, C.H. InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE. 2017-12-08T07:48:15Z 2017-12-08T07:48:15Z 2012 Conference Proceeding 10.1109/NSSMIC.2011.6154421 en_US InAs avalanche photodiodes for X-ray detection. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 2071-2073). [6154421] Institute of Electrical and Electronics Engineers Inc.
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language en_US
description InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.
format Conference Proceeding
author Ker, P.J.
Marshall, A.R.J.
Krysa, A.B.
David, J.P.R.
Tan, C.H.
spellingShingle Ker, P.J.
Marshall, A.R.J.
Krysa, A.B.
David, J.P.R.
Tan, C.H.
InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
author_facet Ker, P.J.
Marshall, A.R.J.
Krysa, A.B.
David, J.P.R.
Tan, C.H.
author_sort Ker, P.J.
title InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
title_short InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
title_full InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
title_fullStr InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
title_full_unstemmed InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
title_sort inas electron avalanche photodiodes with 580 ghz gain-bandwidth product
publishDate 2017
_version_ 1644493816182341632
score 13.18916

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