InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.

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Bibliographic Details
Main Authors: Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H.
Format: Conference Proceeding
Language:en_US
Published: 2017
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Summary:InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively. © 2012 IEEE.