Pulse power failure model of power MOSFET due to electrical overstress using tasca method

The objective of this research is to study electrical overstress (EOS) defect at gate oxide for various pulse widths in n-channel Power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Moreover, this research also intent to develop power failure model for n-channel power MOSFET according...

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Bibliographic Details
Main Authors: Ismail, N.S., Ahmad, I., Husain, H., Chuah, S.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5304
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