Electrical characterization of commercial power MOSFET under electron radiation

This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms...

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Bibliographic Details
Main Authors: Ayub, Wan Nurhasana, Hasbullah, Nurul Fadzlin, Rashid, Abdul Aish Abdallah
Format: Article
Language:English
English
Published: American Scientific Publishers 2017
Subjects:
Online Access:http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf
http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf
http://irep.iium.edu.my/62829/
http://www.iaescore.com/journals/index.php/IJEECS/article/viewFile/10015/7649
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