Characterization and optimizations of silicide thickness in 45nm pMOS device
The characteristics of high performance 45nm pMOS devices based on International Technology Roadmap for Semiconductor (ITRS) have been studied using ATHENA and ATLAS's simulator. There are four factors were varied for 3 levels to perform 9 experiments. The factors are halo implantation, Source/...
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| Main Authors: | , , , |
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| 格式: | Conference Proceeding |
| 出版: |
2017
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| 在线阅读: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5252 |
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