Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device

In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (I Leak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process param...

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Bibliographic Details
Main Authors: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A.
Format: Conference Proceeding
Published: 2017
Online Access:http://dspace.uniten.edu.my:80/jspui/handle/123456789/5246
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