Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device
In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (I Leak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process param...
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| Main Authors: | , , , |
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| Format: | Conference Proceeding |
| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5246 |
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