Application of Taguchi method in the optimization of process variation for 32nm CMOS technology
In this paper, we investigate the effect of four process parameters namely HALO implantation, compensation implantations, SiO2 thickness and silicide annealing time on threshold voltage (VTH) in complementary metal oxide semiconductor (CMOS) technology. The setting of process parameters were determi...
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| Main Authors: | , , , , , , |
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| 格式: | Article |
| 出版: |
2017
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| 在线阅读: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5239 |
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