Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array

• Main Authors: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A., Hamid, A.M.A., Menon, P.S., Elgomati, H.A., Majlis, B.Y., Apte, P.R.
• Format: Conference Proceeding
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:80/jspui/handle/123456789/5225

In this study, orthogonal array of L18 in Taguchi method was used to optimize the process parameters variance on threshold voltage (V TH) in 45nm p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed...