Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi method
In this research paper, the effects of variation on the process parameters were optimised while designing a nano-scaled p-type MOSFET (metal-oxide-semiconductor field-effect transistor) planar device for 22 nm technology. The aim of this procedure is to meet the minimum leakage current (IOFF) by opt...
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| Main Authors: | , , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5187 |
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