Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films

• المؤلفون الرئيسيون: Samad M.I.A., Noor M.M., Nayan N., Bakar A.S.A., Mansor M., Zuhdi A.W.M., Hamzah A.A., Latif R.
• مؤلفون آخرون: 57768220600
• التنسيق: مقال
• منشور في: Acta Materialia Inc 2024
• الموضوعات: Aluminium nitride; Argon plasma; Crystallography; Piezoelectric force microscopy (PFM); Radio frequency (RF) sputtering; Argon; Crystal structure; Gas adsorption; III-V semiconductors; Nitrogen; Oxygen; Piezoelectricity; Single crystals; Sputtering; Temperature; Thin films; AlN thin films; Argon plasmas; Crystals structures; Micro-structural properties; Oxygen content; Piezoelectric force microscopy; Radio frequency sputtering; Sputtering gas; Thin film layers; Aluminum nitride

The growth of highly crystalline c-plane AlN �002� is extremely difficult, entailing high temperature and ultra-high vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN �002� at low temperature. We incorporated p...