Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

• Main Authors: Za�abar F.?., Mahmood Zuhdi A.W., Doroody C., Chelvanathan P., Yusoff Y., Abdullah S.F., Bahrudin M.S., Wan Adini W.S., Ahmad I., Wan Abdullah W.S., Amin N.
• Other Authors: 56374530600
• Format: Article
• Published: MDPI 2024
• Subjects: CIGSe; DC magnetron sputtering; deposition power; energy; molybdenum; molybdenum diselenide (MoSe₂); solar cells; Adhesion; Crystal orientation; Glass substrates; Grain boundaries; Molybdenum compounds; Selenium compounds; Surface structure; Thick films; Thin film solar cells; Thin films; Back contact; Contact layers; DC magnetra sputtering; Deposition power; Energy; Magnetron-sputtering; Mo films; Molybdenum diselenide (mose2); Power; Magnetron sputtering

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical r...