Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical r...

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Main Authors: Za�abar F.?., Mahmood Zuhdi A.W., Doroody C., Chelvanathan P., Yusoff Y., Abdullah S.F., Bahrudin M.S., Wan Adini W.S., Ahmad I., Wan Abdullah W.S., Amin N.
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Published: MDPI 2024
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spelling my.uniten.dspace-342782024-10-14T11:18:47Z Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface Za�abar F.?. Mahmood Zuhdi A.W. Doroody C. Chelvanathan P. Yusoff Y. Abdullah S.F. Bahrudin M.S. Wan Adini W.S. Ahmad I. Wan Abdullah W.S. Amin N. 56374530600 56589966300 56905467200 35766323200 57206844407 14319069500 55603412800 56103771700 12792216600 58175300700 7102424614 CIGSe DC magnetron sputtering deposition power energy molybdenum molybdenum diselenide (MoSe<sub>2</sub>) solar cells Adhesion Crystal orientation Glass substrates Grain boundaries Molybdenum compounds Selenium compounds Surface structure Thick films Thin film solar cells Thin films Back contact CIGSe Contact layers DC magnetra sputtering Deposition power Energy Magnetron-sputtering Mo films Molybdenum diselenide (mose2) Power Magnetron sputtering The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 ?/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability. � 2023 by the authors. Final 2024-10-14T03:18:47Z 2024-10-14T03:18:47Z 2023 Article 10.3390/ma16062497 2-s2.0-85152057125 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85152057125&doi=10.3390%2fma16062497&partnerID=40&md5=6ec9adba4b081f1588e4d53f8ae32421 https://irepository.uniten.edu.my/handle/123456789/34278 16 6 2497 All Open Access Gold Open Access Green Open Access MDPI Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic CIGSe
DC magnetron sputtering
deposition power
energy
molybdenum
molybdenum diselenide (MoSe<sub>2</sub>)
solar cells
Adhesion
Crystal orientation
Glass substrates
Grain boundaries
Molybdenum compounds
Selenium compounds
Surface structure
Thick films
Thin film solar cells
Thin films
Back contact
CIGSe
Contact layers
DC magnetra sputtering
Deposition power
Energy
Magnetron-sputtering
Mo films
Molybdenum diselenide (mose2)
Power
Magnetron sputtering
spellingShingle CIGSe
DC magnetron sputtering
deposition power
energy
molybdenum
molybdenum diselenide (MoSe<sub>2</sub>)
solar cells
Adhesion
Crystal orientation
Glass substrates
Grain boundaries
Molybdenum compounds
Selenium compounds
Surface structure
Thick films
Thin film solar cells
Thin films
Back contact
CIGSe
Contact layers
DC magnetra sputtering
Deposition power
Energy
Magnetron-sputtering
Mo films
Molybdenum diselenide (mose2)
Power
Magnetron sputtering
Za�abar F.?.
Mahmood Zuhdi A.W.
Doroody C.
Chelvanathan P.
Yusoff Y.
Abdullah S.F.
Bahrudin M.S.
Wan Adini W.S.
Ahmad I.
Wan Abdullah W.S.
Amin N.
Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface
description The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 ?/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability. � 2023 by the authors.
author2 56374530600
author_facet 56374530600
Za�abar F.?.
Mahmood Zuhdi A.W.
Doroody C.
Chelvanathan P.
Yusoff Y.
Abdullah S.F.
Bahrudin M.S.
Wan Adini W.S.
Ahmad I.
Wan Abdullah W.S.
Amin N.
format Article
author Za�abar F.?.
Mahmood Zuhdi A.W.
Doroody C.
Chelvanathan P.
Yusoff Y.
Abdullah S.F.
Bahrudin M.S.
Wan Adini W.S.
Ahmad I.
Wan Abdullah W.S.
Amin N.
author_sort Za�abar F.?.
title Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface
title_short Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface
title_full Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface
title_fullStr Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface
title_full_unstemmed Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface
title_sort probing the interplay between mo back contact layer deposition condition and mose2 layer formation at the cigse/mo hetero-interface
publisher MDPI
publishDate 2024
_version_ 1814061173680635904
score 13.214268