Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface
The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical r...
Saved in:
Main Authors: | , , , , , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Published: |
MDPI
2024
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.uniten.dspace-34278 |
---|---|
record_format |
dspace |
spelling |
my.uniten.dspace-342782024-10-14T11:18:47Z Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface Za�abar F.?. Mahmood Zuhdi A.W. Doroody C. Chelvanathan P. Yusoff Y. Abdullah S.F. Bahrudin M.S. Wan Adini W.S. Ahmad I. Wan Abdullah W.S. Amin N. 56374530600 56589966300 56905467200 35766323200 57206844407 14319069500 55603412800 56103771700 12792216600 58175300700 7102424614 CIGSe DC magnetron sputtering deposition power energy molybdenum molybdenum diselenide (MoSe<sub>2</sub>) solar cells Adhesion Crystal orientation Glass substrates Grain boundaries Molybdenum compounds Selenium compounds Surface structure Thick films Thin film solar cells Thin films Back contact CIGSe Contact layers DC magnetra sputtering Deposition power Energy Magnetron-sputtering Mo films Molybdenum diselenide (mose2) Power Magnetron sputtering The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 ?/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability. � 2023 by the authors. Final 2024-10-14T03:18:47Z 2024-10-14T03:18:47Z 2023 Article 10.3390/ma16062497 2-s2.0-85152057125 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85152057125&doi=10.3390%2fma16062497&partnerID=40&md5=6ec9adba4b081f1588e4d53f8ae32421 https://irepository.uniten.edu.my/handle/123456789/34278 16 6 2497 All Open Access Gold Open Access Green Open Access MDPI Scopus |
institution |
Universiti Tenaga Nasional |
building |
UNITEN Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Tenaga Nasional |
content_source |
UNITEN Institutional Repository |
url_provider |
http://dspace.uniten.edu.my/ |
topic |
CIGSe DC magnetron sputtering deposition power energy molybdenum molybdenum diselenide (MoSe<sub>2</sub>) solar cells Adhesion Crystal orientation Glass substrates Grain boundaries Molybdenum compounds Selenium compounds Surface structure Thick films Thin film solar cells Thin films Back contact CIGSe Contact layers DC magnetra sputtering Deposition power Energy Magnetron-sputtering Mo films Molybdenum diselenide (mose2) Power Magnetron sputtering |
spellingShingle |
CIGSe DC magnetron sputtering deposition power energy molybdenum molybdenum diselenide (MoSe<sub>2</sub>) solar cells Adhesion Crystal orientation Glass substrates Grain boundaries Molybdenum compounds Selenium compounds Surface structure Thick films Thin film solar cells Thin films Back contact CIGSe Contact layers DC magnetra sputtering Deposition power Energy Magnetron-sputtering Mo films Molybdenum diselenide (mose2) Power Magnetron sputtering Za�abar F.?. Mahmood Zuhdi A.W. Doroody C. Chelvanathan P. Yusoff Y. Abdullah S.F. Bahrudin M.S. Wan Adini W.S. Ahmad I. Wan Abdullah W.S. Amin N. Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface |
description |
The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 ?/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability. � 2023 by the authors. |
author2 |
56374530600 |
author_facet |
56374530600 Za�abar F.?. Mahmood Zuhdi A.W. Doroody C. Chelvanathan P. Yusoff Y. Abdullah S.F. Bahrudin M.S. Wan Adini W.S. Ahmad I. Wan Abdullah W.S. Amin N. |
format |
Article |
author |
Za�abar F.?. Mahmood Zuhdi A.W. Doroody C. Chelvanathan P. Yusoff Y. Abdullah S.F. Bahrudin M.S. Wan Adini W.S. Ahmad I. Wan Abdullah W.S. Amin N. |
author_sort |
Za�abar F.?. |
title |
Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface |
title_short |
Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface |
title_full |
Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface |
title_fullStr |
Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface |
title_full_unstemmed |
Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface |
title_sort |
probing the interplay between mo back contact layer deposition condition and mose2 layer formation at the cigse/mo hetero-interface |
publisher |
MDPI |
publishDate |
2024 |
_version_ |
1814061173680635904 |
score |
13.214268 |