Process optimization approach in fine pitch Cu wire bonding

• المؤلفون الرئيسيون: Wong B.K., Yong C.C., Eu P.L., Yap B.K.
• مؤلفون آخرون: 36992192300
• التنسيق: Conference paper
• منشور في: 2023
• الموضوعات: Design of experiments; Dielectric materials; Optimization; Silicon compounds; Spheres; Thermal aging; Thermoelectric equipment; Wafer bonding; Aluminum pad; Ball diameter; Ball shear; Ball-shear test; Bond pad; Bonding parameters; Bonding quality; Critical factors; Critical response; Fine pitch; Wafer technology; Wire bonding; Wire

With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, w...