Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire

• المؤلفون الرئيسيون: Kid W.B., Leng E.P., Seong L.B., Weily C., Kar Y.B.
• مؤلفون آخرون: 36992192300
• التنسيق: Conference paper
• منشور في: 2023
• الموضوعات: Copper; Dielectric materials; Gold; Intermetallics; Shear flow; Spheres; Thermal aging; Aluminum wires; Ball diameter; Ball shear strength; Ball size; Ball-shear test; BGA package; Body sizes; Bond pad; Bonding capillary; Bonding parameters; Copper wires; Critical factors; Critical response; Gold prices; Gold wire; IMC thickness; Insulated materials; Low-k dielectric materials; Metallurgical bonds; Peel strength; Semiconductor applications; Ultra fine pitch; Ultra low-k; Wafer technology; Wire bonding; Wire pull strength; Wire

Nowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-a...