Optimization of process parameter variations for 16nm DG-FinFET using Response Surface Methodology-Central Composite Design

• Main Authors: Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K., Hamid A.M.A.
• Other Authors: 57203514087
• Format: Conference Paper
• Published: Institute of Physics Publishing 2023

Design; FinFET; Leakage currents; Polysilicon; Surface properties; Threshold voltage; Central composite designs; International Technology Roadmap for Semiconductors; Optimization of process parameters; Optimization techniques; Process parameters; Response surface method; Response surface methodology...