Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures

• 主要な著者: Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K.
• その他の著者: 57203514087
• フォーマット: 論文
• 出版事項: Institute of Advanced Engineering and Science 2023

This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughou...