Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back su...
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-245882023-05-29T15:24:48Z Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell Gamel M. Jern K.P. Rashid E. Jing L.H. Yao L.K. Wong B. 57215306835 37461740800 57215329739 57190622221 56903550000 57215329405 Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back surface fields; Band diagrams; Concentrated solar cells; Gallium arsenide cells; Illumination conditions; Silvaco; TCAD software; Solar cells GaAs structures are commonly used in concentrated solar cell application, whereas the active region of the cell requires front surface field (FSF) and back surface field (BSF) to complete the band diagram and to improve the conversion efficiency up to 22 % under AM 1.5 illumination condition. However, the integration of different FSF and BSF materials such as AlGaAs, InGaP and InAlP contribute to diverse performance. A fair comparison between these materials will help to optimize the performance of GaAs devices. In this work, Silvaco TCAD software was used to simulate GaAs PV cell with different FSF and BSF materials under 1-sun and 100-sun AM 1.5 illumination condition. A conversion efficiency of 24.08 % and 27.22 % was achieved with InAlP FSF layer under 1-sun and 100-sun AM 1.5 spectrum, respectively. The results obtained from this study will contribute to a better understanding on the effect of FSF and BSF layers while obtaining the optimum FSF and BSF material for the GaAs-based photovoltaic cell. � 2019 IEEE. Final 2023-05-29T07:24:48Z 2023-05-29T07:24:48Z 2019 Conference Paper 10.1109/SENSORSNANO44414.2019.8940098 2-s2.0-85078146677 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078146677&doi=10.1109%2fSENSORSNANO44414.2019.8940098&partnerID=40&md5=e5dddf8ac7b9a23fdbdf2db9f1323cc7 https://irepository.uniten.edu.my/handle/123456789/24588 8940098 Institute of Electrical and Electronics Engineers Inc. Scopus |
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Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back surface fields; Band diagrams; Concentrated solar cells; Gallium arsenide cells; Illumination conditions; Silvaco; TCAD software; Solar cells |
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57215306835 Gamel M. Jern K.P. Rashid E. Jing L.H. Yao L.K. Wong B. |
| format |
Conference Paper |
| author |
Gamel M. Jern K.P. Rashid E. Jing L.H. Yao L.K. Wong B. |
| spellingShingle |
Gamel M. Jern K.P. Rashid E. Jing L.H. Yao L.K. Wong B. Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell |
| author_sort |
Gamel M. |
| title |
Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell |
| title_short |
Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell |
| title_full |
Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell |
| title_fullStr |
Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell |
| title_full_unstemmed |
Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell |
| title_sort |
effect of front-surface-field and back-surface-field on the performance of gaas based-photovoltaic cell |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806425774524203008 |
| score |
13.214268 |